Day 2: Tuesday 11 September: Defects in substrates and Epitaxial Layers

08.45-09.00: welcome and introductory remarks (Eddy Simoen)
09.00-10.00: Grown-in defects in semiconductor substrates (Cor Claeys)
10.00-10.30: coffee break
10.30-11.30: Introduction to epitaxial growth (Andriy Hikavyy)
11.30-12.30: Grown-in defects in hetero-epitaxy on silicon and their control
       (Bernardette Kunert)
12.30-14.00: lunch
14.00-15.00: Defects in mc-Si for photovoltaics (John Murphy)
15.00-16.00: Defects in III-N materials on Si (Ming Zhao)
16:00-16.30: coffee break
16.30-17.30: Using carrier lifetime measurements to study defects in semiconductors        (John Murphy)
17.30-19.00: Student poster session + reception